| 铜膜电阻温度传感器研制中的几个关键技术分析 |
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| 引用本文： | 李光云 黄建兴. 铜膜电阻温度传感器研制中的几个关键技术分析[J]. 华南师范大学学报(自然科学版), 1993, 0(2): 1-17 |
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| 作者姓名： | 李光云 黄建兴 |
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| 作者单位： | 华南师范大学量子电子学研究所(李光云，陈佩娴，任进勇)，华南师范大学化学系(黄建兴，杨年光)，广东省乡镇企业科技开发服务中心(林大流) |
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| 摘 要： | 本文分析讨论研制钢膜电阻温度传感器的几个关键技术和工艺,并说明光刻版的设计要与实验室的工艺条件相适应;蒸发源的纯度、镀膜室的真空度和基片的温度对镀膜的质量有重要影响;镀膜厚度对器件互换性有重大影响,光刻时要防止到蚀过量和刻蚀不足等.文中还公开了作者在这些方面的做法和体会.
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| 关 键 词： | 铜 薄膜 温度传感器 光刻版 镀膜 刻蚀 |
ANALYSIS OF KEY TECHNIQUES IN THE DEVELOPMENT OF COPPER FILM RESISTANCE TEMPERATURE SENSORS |
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| Li Guangyun Chen Peixian Ren Jinyong. ANALYSIS OF KEY TECHNIQUES IN THE DEVELOPMENT OF COPPER FILM RESISTANCE TEMPERATURE SENSORS[J]. Journal of South China Normal University(Natural Science Edition), 1993, 0(2): 1-17 |
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| Authors: | Li Guangyun Chen Peixian Ren Jinyong |
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| Abstract: | Several key techniques in the development of copper film resistance temperature sensors are dis-16 cussed. The design of photolithography should correspond with the technoiogical conditions in the laboratory. The quality of the film is greatly influenced by the purity of evaporator source and the vacuity in evaporation, and the temperature of the base. In turn,thickness of the film influences greatly the exchangeability of the devices. Both excessive and insufficient photoetching should be avoided. In the paper,some techniques are revealecl. |
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| Keywords: | copper film temperature sensor photoetching model coat etch |
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