| 基于低阶自适应模型及时滞补偿的单晶硅直径控制研究 |
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| 引用本文： | 鲁照权,郑国俊,董学平,殷礼胜,彭海军,余波. 基于低阶自适应模型及时滞补偿的单晶硅直径控制研究[J]. 安徽大学学报(自然科学版), 2010, 34(4) |
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| 作者姓名： | 鲁照权 郑国俊 董学平 殷礼胜 彭海军 余波 |
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| 作者单位： | 合肥工业大学,电气与自动化工程学院,安徽,合肥,230009 |
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| 基金项目： | 国家自然科学基金资助项目 |
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| 摘 要： | 直拉单晶硅直径与功率之间是一个复杂的四阶振荡系统,并有一定的惯性滞后,因此,使用常规方法控制该系统不能获得满意的性能.采用自适应降阶模型加时滞环节拟合复杂高阶系统,并进行时滞补偿控制.仿真结果表明:带有时滞环节的自适应降阶模型具有良好的自动拟合复杂系统及时滞补偿能力,使得直径控制系统具有良好的动静态性能.
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| 关 键 词： | 单晶硅 直径控制 降阶自适应模型 时滞补偿 |
Research on a control for the diameter of single crystal silicon based on delay compensator and low order adaptive model |
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| LU Zhao-quan,ZHENG Guo-jun,DONG Xue-ping,YIN Li-sheng,PENG Hai-jun,YU Bo. Research on a control for the diameter of single crystal silicon based on delay compensator and low order adaptive model[J]. Journal of Anhui University(Natural Sciences), 2010, 34(4) |
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| Authors: | LU Zhao-quan ZHENG Guo-jun DONG Xue-ping YIN Li-sheng PENG Hai-jun YU Bo |
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| Affiliation: | LU Zhao-quan,ZHENG Guo-jun,DONG Xue-ping,YIN Li-sheng,PENG Hai-jun,YU Bo(School of Electrical Engineering and Automation,Hefei University of Technology,Hefei 230009,China) |
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| Abstract: | It was a complex fourth-order oscillating system with some time delay between the diameter of single crystal silicon and power.The performance of the system,which was controlled with usually method,was not satisfactory.In this paper,adaptive reduced-order model plus dead time had been used to approximate the complex high-order system and to compensate inertia time delay.Simulation results showed that the control system with adaptive reduced-order model plus dead time had good ability to auto-approximating t... |
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| Keywords: | single crystal silicon diameter control reduced-order adaptive model time delay compensate |
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