| 单根ZnO纳米线半导体器件的制备及湿敏特性研究 |
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| 引用本文： | 董照月,郎颖,姜威,侯洪涛.单根ZnO纳米线半导体器件的制备及湿敏特性研究[J].哈尔滨师范大学自然科学学报,2010,26(3):50-52. |
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| 作者姓名： | 董照月 郎颖 姜威 侯洪涛 |
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| 作者单位： | 哈尔滨师范大学 |
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| 基金项目： | 哈尔滨师范大学第四届创新基金资助项目 |
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| 摘 要： | 利用模板法制备了单根ZnO纳米线半导体器件,得到了具有欧姆接触的电极,对器件进行了湿敏测试,通过测得的I-V曲线及响应恢复特性曲线剖析其敏感机理.
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| 关 键 词： | ZnO 敏感元件 吸附 |
The Research on Fabrication and Moisture Sensitivity of Device Based on a Single ZnO Nanowire a Semiconductor |
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| Dong Zhaoyue,Lang Ying,Jiang Wei,Hou Hongtao.The Research on Fabrication and Moisture Sensitivity of Device Based on a Single ZnO Nanowire a Semiconductor[J].Natural Science Journal of Harbin Normal University,2010,26(3):50-52. |
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| Authors: | Dong Zhaoyue Lang Ying Jiang Wei Hou Hongtao |
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| Institution: | (Harbin Normal University) |
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| Abstract: | A semiconductor device based on a single ZnO nanowire was fabricated.The ohmic electrode was synthesized by the template method.By testing the I-V curve and answer-recover curve for vapor, the mechanism of the device was analyzed. |
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| Keywords: | ZnO Sensor Adsorption |
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