光致开路电压衰减法测量少数载流子的寿命

本文提出了一种测量少数载流子寿命的方法。先将样品做成p~+nn~+或n~+pp~+结,测量光致开路电压的衰减速率,然后用文中导出的理论公式计算少数载流子的寿命。实验结果表明,这种方法能有效地避免表面复合的影响。

Measurement of Minority Carrier Lifetime from Photo-Induced Open-Circuit Voltage Decay

In this paper showed a measurement method of minority carrier lifetime. First making sample into a p+nn + and n + pp+ junction. Surevey the decay rate of photo-induced open-circuit voltage. Then counting minority carrier lifetime from in this paper given equation. This method can fight off effectively the effects of surface recombination from experimental results