| 蒙特卡罗方法模拟PVD薄膜生长的研究进展(综述) |
| |
| 引用本文： | 谭天亚,李春梅,吴炜,郭永新,韩宇,张静,苏宇.蒙特卡罗方法模拟PVD薄膜生长的研究进展(综述)[J].辽宁大学学报(自然科学版),2007,34(2):120-123. |
| |
| 作者姓名： | 谭天亚 李春梅 吴炜 郭永新 韩宇 张静 苏宇 |
| |
| 作者单位： | 辽宁大学,物理系,沈阳市光电子功能器件与检测技术重点实验室,辽宁,沈阳,110036 |
| |
| 基金项目： | 辽宁大学科研启动基金资助项目（408041） |
| |
| 摘 要： | 综述了蒙特卡罗方法模拟物理气相沉积薄膜生长的研究进展．特别对基底的表面形貌、结构缺陷、沉积温度等因素对薄膜生长影响的蒙特卡罗方法模拟的研究进展进行了分析和归纳．最后对蒙特卡罗方法模拟薄膜生长的研究进行了展望．
|
| 关 键 词： | 蒙特卡罗方法 模拟 薄膜生长 基底 |
| 文章编号： | 1000-5846（2007）02-0120-04 |
| 修稿时间： | 2006-11-30 |
Progress of Monte-Carlo Simulation of the Growth of thin Films by Physical Vapor Deposited |
| |
| TAN Tian-ya,LI Chun-mei,WU Wei,GUO Yong-xin,HAN Yu,ZHANG Jing,SU Yu.Progress of Monte-Carlo Simulation of the Growth of thin Films by Physical Vapor Deposited[J].Journal of Liaoning University(Natural Sciences Edition),2007,34(2):120-123. |
| |
| Authors: | TAN Tian-ya LI Chun-mei WU Wei GUO Yong-xin HAN Yu ZHANG Jing SU Yu |
| |
| Institution: | Shenyang Key Laboratory of Photoelectronic Devices and Detection Technology, Department of Physics, Liaoning University, Shenyang 110036, China |
| |
| Abstract: | The progress of Monte-Carlo simulation of the growth of thin films is reviewed. The effect of many factors on the growth of thin films is especially analyzed and generalized, such as surface topography, structure defect of substrate, deposition temperature, and so on. At last, the study of using Monte-Carlo method to simulate the growth of thin films by physical vapor deposited is also predicted. |
| |
| Keywords: | Monte-Carlo method simulation growth of thin film substrate |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
