| 现代外延生长技术 |
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| 引用本文： | 黄和鸾. 现代外延生长技术[J]. 辽宁大学学报(自然科学版), 1994, 21(1): 30-38 |
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| 作者姓名： | 黄和鸾 |
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| 作者单位： | Huang Heluan Department of Electronic Science and Engineering，Liaoning University |
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| 摘 要： | 由于现代外延生长技术的不断完善，使异质结器件、量子阱与超晶格材料的生长与应用得到迅速发展．本文概述了目前半导体材料与器件研究最先进的几种外延生长技术，包括ＭＢＥ、ＭＯＣＶＤ、ＣＢＥ、ＡＬＥ和ＨＷＥ．
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| 关 键 词： | 外延生长技术 半导体材料 |
Modern Epitaxy Techniques |
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| Huang Heluan. Modern Epitaxy Techniques[J]. Journal of Liaoning University(Natural Sciences Edition), 1994, 21(1): 30-38 |
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| Authors: | Huang Heluan |
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| Affiliation: | Huang Heluan Department of Electronic Science and Engineering,Liaoning University |
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| Abstract: | Because of the continual progress of epitaxy growth techniques theheterojunction devices,quantum wells and superlattice materials were developedrapidly.This article reviews briefly the most advanced epitaxy techniques includingMBE,MOCVD,CBE,ALE,and HWE of the present. |
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| Keywords: | Molecular beam epitaxy Metal organic chemical vapor deposition Chemical beam epitaxy Atomic layer epitaxy Hot wall epitaxy. |
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