| 多晶硅压力传感器温度自补偿性能研究 |
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| 引用本文： | 姚素英 毛赣如. 多晶硅压力传感器温度自补偿性能研究[J]. 天津大学学报(自然科学与工程技术版), 1997, 30(3): 294-298 |
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| 作者姓名： | 姚素英 毛赣如 |
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| 基金项目： | 国家“八五”重点科技攻关项目 |
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| 摘 要： | 介绍了多晶硅压力传感器的温度特性。重点研究了ＬＰＣＶＤ．Ｐｏｌｙ－Ｓｉ膜的掺杂浓度对传感器温度特性的影响。通过理论分析和实验研究，找到了实现传感器温度自补偿的最佳掺杂浓度值。获得了工作温度高，温度特性好的压力传感器，实验结果与理论分析相符。
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| 关 键 词： | 多晶硅 温度特性 自补偿 压力传感器 |
STUDY OF TEMPERATURE SELF COMPENSATION PROPERTIES OF POLYSILICON PRESSURE SENSORS |
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| Yao Suying Mao Ganru Qu Hongwei Zhang Weixin. STUDY OF TEMPERATURE SELF COMPENSATION PROPERTIES OF POLYSILICON PRESSURE SENSORS[J]. Journal of Tianjin University(Science and Technology), 1997, 30(3): 294-298 |
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| Authors: | Yao Suying Mao Ganru Qu Hongwei Zhang Weixin |
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| Affiliation: | Dept. of Electronic Eng. |
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| Abstract: | This paper studies the temperature properties of Polysilicon pressure sensor, with a stress on the influence of doping concentration of LPCVD Poly Si films on the temperature property of pressure sensor. As the boron concentration has been optimized by the theoretical analysis and experimental results, the temperature self compensation is realized. The pressure sensor with high operating temperature and better temperature coeffiecient is obtained. Experimental results agree with the theoretical analysis. |
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| Keywords: | polycrystalline silicon temperature property self compensation |
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