化学浴沉积法制备纳米氧化亚铜薄膜及其表征

以五水硫代硫酸钠和五水硫酸铜配制冷溶液,氢氧化钠配制热溶液,利用氧化铟锡导电玻璃基底在两种溶液中循环浸泡的化学浴沉积法制备氧化亚铜薄膜。对沉积过程中所发生的化学反应进行了讨论,并将制成的薄膜样品分别利用X射线衍射仪、扫描电镜、场发射扫描电镜和紫外-可见分光光度计进行表征,表征结果从多方面证实了合成的材料为纳米量级的氧化亚铜薄膜。构成薄膜的颗粒粒径约为十几纳米,每经过一次循环,薄膜厚度增加11～12nm.氧化亚铜对波长在200nm到500nm范围内的光有较高吸收率,禁带宽度计算值约为2.18eV.

Chemical Bath Deposition and Characterization of Nanoscale Cuprous Oxide Films

The cold solution was prepared with sodium thiosulfate pentahydrate and copper sulfate pentahydrate. The hot one was prepared with sodium hydroxide. Cuprous oxide films were synthesized via chemical bath deposition of immersing indium tin oxide glass substrates into the 2 kinds of solution circularly. We discussed the chemical reactions during deposition process and characterized the samples with X-ray diffractometer, scanning electron microscope, field emission scanning electron microscope and UV-Vis spectrophotometer. The results confirmed that the synthesized materials were nanoscale cuprous oxide films in several angles. The films were accumulated by small particles with size of a dozen nanometers, and each cycle resulted in an increment of 11-12nm. Cuprous oxide films had high absorbance in the range between 200nm and 500nm. The calculated band gap was about 2.18eV.