| 新型垂直沟道的NPN型偶载场效应晶体管的设计及特性 |
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| 引用本文： | 任永玲,于理科,李国辉,姬成周. 新型垂直沟道的NPN型偶载场效应晶体管的设计及特性[J]. 北京师范大学学报(自然科学版), 2003, 39(1): 63-66 |
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| 作者姓名： | 任永玲 于理科 李国辉 姬成周 |
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| 作者单位： | 北京师范大学射线束技术与材料改性教育部重点实验室,北京师范大学低能核物理研究所:100875,北京 |
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| 基金项目： | 国家自然科学基金;60244004; |
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| 摘 要： | 研制了一种新模式的半导体场效应晶体第－－垂直沟道的偶载场效应晶体管（VDCFET），这种结构可以避免现有光刻技术的制约，使用常规的半导体双极晶体管工艺，既可把有效沟道长度减短，大大提高器件的速度，又可将电源电压降低到小于1V，大幅度降低功耗，改进其电学性能。本器件可应用于高频电路、D触发器、环振电路及反相器等重要电路。从纵向和横向报道了器件的设计思想，并给出了器件特性的测量结果。
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| 关 键 词： | 垂直沟道的偶载场效应晶体管 系统级芯片 有效沟道长度 |
| 修稿时间： | 2002-09-24 |
THE DESIGN AND PROPERTY STUDY OF A NEW NPN VERTICAL DUAL CARRIER FIELD EFFECT TRANSISTOR |
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| Ren YonglingYu LikeLi GuohuiJi Chengzhou. THE DESIGN AND PROPERTY STUDY OF A NEW NPN VERTICAL DUAL CARRIER FIELD EFFECT TRANSISTOR[J]. Journal of Beijing Normal University(Natural Science), 2003, 39(1): 63-66 |
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| Authors: | Ren YonglingYu LikeLi GuohuiJi Chengzhou |
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| Abstract: | A new mode of field effect transistors is studied. Which is na med vertical dual carrier field effect transistor (VDCFET). This structure can a void the limit of photolithography, and make the normal semiconductor technique s be enough. Effective channel length is reduced to improve the speed of the dev ice. Operating voltage is reduced to lower than one volt to reduce device consum ption and to improve electric characteristics of the device. VDCFET can be appli ed to many fields such as high frequency, D triggers, ring oscillations, inverto rs, flip-flops and so on. The thought of design and the property of the device are reported. |
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| Keywords: | vertical dual carrier field effect transistor(VDCFET) SOC effective channel length |
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