| B离子注入n(Si)-GaAs层的特性研究 |
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| 引用本文： | 刘伊犁,罗晏,李国辉,姬成周.B离子注入n(Si)-GaAs层的特性研究[J].北京师范大学学报(自然科学版),1992(4). |
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| 作者姓名： | 刘伊犁 罗晏 李国辉 姬成周 |
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| 作者单位： | 北京师范大学低能核物理研究所，北京师范大学低能核物理研究所，北京师范大学低能核物理研究所，北京师范大学低能核物理研究所 100875 北京新外大街，100875 北京新外大街，100875 北京新外大街，100875 北京新外大街 |
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| 摘 要： | B~+注入n(Si)-GaAs层,可以在带间引入与损伤相关的深能级,补偿自由电子,使n型导电层变为高阻层。若注B后退火,在一定的退火条件下,在GRAs晶格的恢复过程中,B占据Ga的位置,形成B_(Ga),并与As空位V_(As)络合形成络合物B_(Ga)V_(As)。由于B_(Ga)V_(As)和Si的相互作用,促使Si占据As的位置,形成受主,从而降低了n(Si)-GaAs层中的载流子浓度。我们认为B注入n(Si)-GaAs层光发光测量中观察到的1.33 eV峰与B,Si相关。
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| 关 键 词： | B离子注入 n(Si)-GaAs 络合物B_(Ga)V_(As) 施主受主补偿 光发光 |
A STUDY OF THE CHARACTERISTICS OF AN n(Si)-GaAs LAYER IMPLANTED BY BORON IONS |
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| Liu Yili Luo Yan Li Guohui Ji Chengzhou.A STUDY OF THE CHARACTERISTICS OF AN n(Si)-GaAs LAYER IMPLANTED BY BORON IONS[J].Journal of Beijing Normal University(Natural Science),1992(4). |
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| Authors: | Liu Yili Luo Yan Li Guohui Ji Chengzhou |
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| Abstract: | B~+ implantation into n (Si)-GaAs can create midgap, damagerelated leculs which compensate the free carriers in the material and make the n-type GaAs layer change into a high reeistivity layer. During the postimplantation annealing, B may occupy a Ga site, and a vacancy is created on an As site, so that a B_(Ga)V_(As) complex is formed. The B_(Ga) V_(As) complex reacts with Si, and gives rise to an increase in the occupancy of the Si atoms on the As sites. Then, an acceptor is formed. It is suggested that 1.33eV line in the PL spectrum is attributed to these defects like B_(Ga) and Si_(As). |
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| Keywords: | B~+ implantation n(Si)-GaAs layer B_(Ga) V_(As) complex donoracceptor compensation photoluminescence |
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