| 功率晶体管背面金属化研究 |
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| 引用本文： | 张利春,赵忠礼,等.功率晶体管背面金属化研究[J].北京大学学报(自然科学版),1993,29(1):87-95. |
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| 作者姓名： | 张利春 赵忠礼 |
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| 作者单位： | [1]北京大学微电子学研究所 [2]北京电子电力新技术研究开发 |
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| 摘 要： | 本文对比研究了磁控溅财、化学镀镍和蒸发等不同方法制备的背面金属化层对功率晶体管性能的影响。结果表明，采用磁控溅射方法制备的银系多层金属电极能显著降低功率晶体管的热阻，减小饱和压降和改善在电流特性。特别是，间隙工作寿命试验超过38000次以上，达到高可靠质量要求。文中还研究了金属化层制备中芯片背面状况对晶体管性能的影响。
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| 关 键 词： | 功率晶体管 背面金属化 |
Investigation of Power Transistor Back Metallization |
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| ZHANG Licun,GAO Yuzhi,NING Baojun,WANG Yangyuan.Investigation of Power Transistor Back Metallization[J].Acta Scientiarum Naturalium Universitatis Pekinensis,1993,29(1):87-95. |
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| Authors: | ZHANG Licun GAO Yuzhi NING Baojun WANG Yangyuan |
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| Abstract: | The effects of back metallization layers prepared by various methods e. g., magneton sputtering, chemical nickelplating and evaporation on power transistor performance are investigated. The results show that silver multilayer metal electrodes deposited by magneton sputtering are effective for reducing the thermal resistance and saturation voltage of power transistor, and for improving the device current character. Particularly, the interrupt work life of transistor is more than 38000, so that the devices are of very high reliability. In addition, the effect of back uniformity of the chip on transistor performance is studied. |
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| Keywords: | Power transistor Back metallization Magneton sputtering High reliability |
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