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磁控溅射制备参数对 ZnO:Al电学性能的影响
引用本文:殷胜东,马勇,籍勇亮. 磁控溅射制备参数对 ZnO:Al电学性能的影响[J]. 淮北煤炭师范学院学报(自然科学版), 2006, 27(1): 16-21
作者姓名:殷胜东  马勇  籍勇亮
作者单位:重庆师范大学物理学与信息技术学院,重庆,400047
基金项目:重庆市教委科研基金资助项目(040810)
摘    要:ZnO:Al(ZAO)透明导电薄膜是一种n型半导体,有高的载离子浓度和大的光学禁带宽度,具有优异的电学和光学性能,有极广的应用前景.本文介绍了ZAO薄膜的广泛用途和今后研究的趋势,并着重分析了磁控溅射制备参数对电学性能的影响.

关 键 词:ZAO薄膜  电学性能  磁控溅射
文章编号:1672-7177(2006)01-0016-06
修稿时间:2005-11-01

Effect of Magnetron Sputtering Growth Parameters on Electrical Properties of ZnO:Al
YIN Sheng-dong,MA Yong,JI Yong-liang. Effect of Magnetron Sputtering Growth Parameters on Electrical Properties of ZnO:Al[J]. Journal of Huaibei Coal Industry Teachers College(Natural Science edition), 2006, 27(1): 16-21
Authors:YIN Sheng-dong  MA Yong  JI Yong-liang
Abstract:Transparent conductive ZnO:Al(ZAO) thin films are semi-conductor oxides with both high carrier concentration and large optical band gap.ZAO films have outstooding electrical and optical properties,and are emerging as a most potential alternative candidate for transparent conducting material.The applications and the proposal for the future research of ZAO are described.The effect of growth parameters on the properties are mostly analysed.
Keywords:ZAO films  electrical properties  magnetron sputtering
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