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Structure and electrical characteristics of Nb-doped SrTiO3 substrates
作者姓名:HUANG  Yanhong  LUE  Huibin  GUO  Haizhong  LIU  Lifeng  HE  Meng  CHEN  Zhenghao  ZHOU  Yueliang  ZHAO  Kun  JIN  Kuijuan  YANG  Guozen
作者单位:Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
基金项目:Acknowledgements This work was supported by the National Natural Science Foundation of China (Grant No. 10334070) and the National Key Basic Research & Development Programme of China (No. 2004CB619004).
摘    要:Strontium titanate (SrTiO3) has been widely used as substrates for growing perovskite oxides thin films be- cause SrTiO3 is chemically and compositionally stable, and has small lattice mismatch with many perovskite oxides1―3]. It is known that SrTiO3 it…

关 键 词:  掺杂  SrTiO3  激光晶体  电性能
收稿时间:2006-04-12
修稿时间:2006-04-122006-04-17

Structure and electrical characteristics of Nb-doped SrTiO3 substrates
HUANG Yanhong LUE Huibin GUO Haizhong LIU Lifeng HE Meng CHEN Zhenghao ZHOU Yueliang ZHAO Kun JIN Kuijuan YANG Guozen.Structure and electrical characteristics of Nb-doped SrTiO3 substrates[J].Chinese Science Bulletin,2006,51(16):2035-2037.
Authors:Yanhong Huang  Huibin Lü  Haizhong Guo  Lifeng Liu  Meng HE  Zhenghao Chen  Yueliang Zhou  Kun Zhao  Kuijuan Jin  Guozen Yang
Institution:(1) Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, China
Abstract:The studies on structure and electrical characteristic of Nb-doped SrTiO3 (SNTO) substrates by XRD, Hall measurements, R-T and SEM, show that the SNTO substrates with the same Nb-doping concentration have different electrical properties be- cause of the nonuniformity of Nb-doping. The uni- formly doped high-quality substrates are extremely important for fabricating multilayer structure and de- vices. In addition, the experimental results also pro- vide us with SEM method to judge the uniformity of conducting material.
Keywords:Nb-doped SrTiO3  laser molecular beam epitaxy  electri- cal properties  doping uniformity  
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