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透射表面电离生成正离子的解析模拟
引用本文:缴桂跃,姬成周.透射表面电离生成正离子的解析模拟[J].北京师范大学学报(自然科学版),1995,31(3):334-337.
作者姓名:缴桂跃  姬成周
作者单位:北京师范大学分析测试中心,北京师范大学低能核物理研究所
摘    要:基于Langmuir-Saha表面电离理论,推演一适用于透射表面电离过程的解析模型,包括系统导流系数的解析表述,中性粒子流密度公式的修正,空间电荷影响下的电离几率等,并给出了与透射型表面电离源实验结果的比较。

关 键 词:透射表面电离  电离几率  俘获几率  正离子  电离势

ANALYTICAL MODELING OF POSITIVE ION BEAM GENERATION THROUGH TRANSMISSION SURFACE IONIZATION
Jiao Guiyue, Ji Chengzhou, Wang Guangfu.ANALYTICAL MODELING OF POSITIVE ION BEAM GENERATION THROUGH TRANSMISSION SURFACE IONIZATION[J].Journal of Beijing Normal University(Natural Science),1995,31(3):334-337.
Authors:Jiao Guiyue  Ji Chengzhou  Wang Guangfu
Abstract:An analytical model with respect to the transmissive surface ionization process which included an analytical expression for the perveance of electrode system, the development relating to the estimation of neutral cesium flux and the probability for ionization in the effect of space charge regime is determined based on the Langmuir-Saha surface ionization theory and is compared with the experimental data depended a transmit-type surface ionization source.
Keywords:transmission surface ionization  probability for ionization  probability for capture  perveance  porosity
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