| 聚酰亚胺薄膜电容栅FET湿度传感器的研制 |
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| 引用本文： | 骆如枋 陆德仁. 聚酰亚胺薄膜电容栅FET湿度传感器的研制[J]. 应用科学学报, 1996, 14(1): 86-90 |
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| 作者姓名： | 骆如枋 陆德仁 |
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| 作者单位： | 中国科学院上海冶金研究所 |
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| 基金项目： | 传感器联合开放国家实验室资助 |
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| 摘 要： | 一种聚酰亚胺薄膜电容栅ＦＥＴ微型湿度传感器已经初步研制成功，这是一个ｎ沟道增强型器件，具有曲折栅结构；沟道长约１０μｍ，宽〉８００μｍ，栅区绝缘层厚约３００ｎｍ（ＳｉＯ２＋Ｓｉ３Ｎ４）；一个Ａｕ－ＰＩ－Ａｌ纵向湿敏电容覆植于绝缘栅上，本文报道该ＰＩ－ＨＵＭＦＥＴ的结构设计；工作原理和主要性能并对某些有关问题进行了初步讨论。
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| 关 键 词： | 湿度传感器 聚酰亚胺 FET 薄膜 电容栅 |
DEVELOPMENT OF A POLYIMIDE FILM CAPACITIVE GATE FET HUMIDITY SENSOR |
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| LUO RUFANG, LU DEREN,LU YUPING. DEVELOPMENT OF A POLYIMIDE FILM CAPACITIVE GATE FET HUMIDITY SENSOR[J]. Journal of Applied Sciences, 1996, 14(1): 86-90 |
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| Authors: | LUO RUFANG LU DEREN LU YUPING |
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| Abstract: | A micro HUMFET with a polyimide(PI)film humlsensingeapaoitorling on the insulating gate was developed. It is an n--channel enhancement modedertoo with a meandering gage of 10pm in ehannel length and >8000pm inchannel width and with a double insulating gate(SiOZ Si.N.) of about 30()urn.The hnmi--senaing capacitor lying on the inSulating gate is an An--PI--Al oapaoftor.The structure design and operation principle of the PI--HUMFET weredescribed.Tbe measuring result of the Oharacteristics of the device was rePOsedand some relax've problems were discussed. |
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| Keywords: | humidity humidity sensor polyimide FET |
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