| 复合结构的静电感应器件 |
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| 引用本文： | 刘思渊,刘肃.复合结构的静电感应器件[J].应用科学学报,1996,14(2):243-247. |
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| 作者姓名： | 刘思渊 刘肃 |
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| 作者单位： | 兰州大学，兰州大学物理系 |
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| 摘 要： | 复合结构的静电感应器件李思渊，刘肃，刘瑞喜，杨建红（兰州大学）关键词静电感应器件，复合结构，Ｉ～Ｖ特性表面栅结构（Ｓ－－８）和埋栅结构（ＨＳ）作为静电感应器件的基本结构已由若干作者进行过研究”－”．近几年我们采用了一种介于上述两种结构之间的结构（用０...
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| 关 键 词： | 静电感应器件 复合结构 I～V特性 |
THE STATIC INDUCTION DEVICES WITH COMPLEX STRUCTURE |
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| S Y LI, S LIU R, X LIU, J H YANG.THE STATIC INDUCTION DEVICES WITH COMPLEX STRUCTURE[J].Journal of Applied Sciences,1996,14(2):243-247. |
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| Authors: | S Y LI S LIU R X LIU J H YANG |
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| Institution: | Lanzhou University |
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| Abstract: | A complex structure (C-S) which can be used in fabricating the Static Induction Devices (SID)is proposed and designed. This structural devices exhibit typical I-V characteristics and electrical performance, which are the same as those for the surface-gate and buried-gate types of SID. The experiment results indicate that C-S may be adopted as one of basic structures of SID. A prominent merit of C-S is that only ordinary planar technology is used to fabricate the SID. |
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| Keywords: | static induction dedvices complex structure I-V characteristics |
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