| 微型NiFe条形薄膜元件在反磁化过程中的磁畴活动 |
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| 引用本文： | 余晋岳,周勇.微型NiFe条形薄膜元件在反磁化过程中的磁畴活动[J].应用科学学报,1996,14(3):318-324. |
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| 作者姓名： | 余晋岳 周勇 |
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| 作者单位： | 上海交通大学 |
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| 摘 要： | 该文应用Ｂｉｔｔｅｒ粉纹技术系统地观察，并从能量分析了微型４０ｎｍ厚度ＮｉＦｅ薄膜条状元件在难轴方向反磁化过程中，磁畴结构的特性和变迁过程。研究表明，元件中的Ｂａｒｋａｕｓｅｎ跳跃是畴壁合并，壁态转变和塞漏畴转变等不可逆磁畴结构变化过程的结果。
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| 关 键 词： | 薄膜元件 反磁化 磁畴 畴壁 NiFe 磁记录 |
THE DOMAIN ACTIVITIES DURING THE MAGNETIZATION REVERSAL PROCESS IN SMALL PERMALLOY FILM STRIPES |
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| YU JINYUE, YE WEICHEN, SONG BAIQUAN, ZHOU YONG, ZHANG HONG.THE DOMAIN ACTIVITIES DURING THE MAGNETIZATION REVERSAL PROCESS IN SMALL PERMALLOY FILM STRIPES[J].Journal of Applied Sciences,1996,14(3):318-324. |
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| Authors: | YU JINYUE YE WEICHEN SONG BAIQUAN ZHOU YONG ZHANG HONG |
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| Institution: | Shanghai Jiao Tong University |
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| Abstract: | By the Bitter pattern technique and the energy analysis method, we systematically studied the character and variations of domain structures during the magnetization reversal process along the hard-axis direction of a 40 nm NiFe film stripe. It shows that the Barkhausen jumps in the element are the result of the irreversible domain processes, involving domain wall mergence, closure domain transitions, and wall-state transitions. |
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| Keywords: | thin film element magnetization reversal magnetic domain domain wall |
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