PIN结构自扫描光电二极管列阵的理论分析及实验研究

提出了用ＰＩＮ结构代替通用的ＰＮ结构构组成自扫描光电二极管列阵的构想，并从理论上推导了再充电采样的ＳＳＰＡ性能参数的一般表达式。由此推断出ＰＩＮ结构ＳＳＰＡ具有高响应度高分辨率的特点。

Theoretical Analysis and Experimental Research of Self-Scanned Photodiode Array with PIN Structure

This paper proposes a new idea that Self-scanned Photodiode Array(SSPA)withthe common PN structure is replaced by the PIN structure.Theoretically,the general formulae of theproperties of recharged sampled mode SSPA are analysed in detail and a con clusion is drawn thatSSPA with PIN structure has the properties of higher responsibility and higher resolution,We com-pare its properties with those of SSPA with PN structure of equal area photosensitive cell.The resultshows that the former one has higher resposibility and the other parameter features are superior tothe latter.The experimental results are consistent with the theory.The new type of imaging sensorwith PIN structure can be widely used in the field of high speed data record,high resolving and dimlight detection ect.