| 激光辐照NTD—Si形成P—N结的研究 |
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| 引用本文： | 王永瑜,徐克服,董秘刚. 激光辐照NTD—Si形成P—N结的研究[J]. 山西师范大学学报：自然科学版, 1993, 0(1) |
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| 作者姓名： | 王永瑜 徐克服 董秘刚 |
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| 作者单位： | 西北大学物理系，山西师大物理系，西北大学物理系 |
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| 摘 要： | 本文扼要阐述了用CO_2辖续激光辐照NTD—St生成P—N结的具体过程与条件并根据实际数据对其生成机理作了合理分析。
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| 关 键 词： | 激光中了媗变掺杂 电子一空穴结 辐照 掺杂 |
The P-N Junction Formation of NTD Silicon by Laser and Investigation of There Properties |
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| Wang Yongyue,Xu Kefu,Dong Migang. The P-N Junction Formation of NTD Silicon by Laser and Investigation of There Properties[J]. Journal of Shanxi Teachers University, 1993, 0(1) |
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| Authors: | Wang Yongyue Xu Kefu Dong Migang |
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| Affiliation: | Wang Yongyue;Xu Kefu;Dong Migang |
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| Abstract: | In This paper,we present a new method to make The P--N Junetion in NTD silicon and inverstigation the electrical properties,such as,conductance tyne,sheet vesistance,Voctage--current characteristic. in order to illustrate above result we persent a model. |
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