| 激光辐照NTD—Si形成P—N结的研究 |
| |
| 引用本文： | 王永瑜,徐克服,董秘刚.激光辐照NTD—Si形成P—N结的研究[J].山西师范大学学报,1993(1). |
| |
| 作者姓名： | 王永瑜 徐克服 董秘刚 |
| |
| 作者单位： | 西北大学物理系，山西师大物理系，西北大学物理系 |
| |
| 摘 要： | 本文扼要阐述了用CO_2辖续激光辐照NTD—St生成P—N结的具体过程与条件并根据实际数据对其生成机理作了合理分析。
|
| 关 键 词： | 激光中了媗变掺杂 电子一空穴结 辐照 掺杂 |
The P-N Junction Formation of NTD Silicon by Laser and Investigation of There Properties |
| |
| Wang Yongyue,Xu Kefu,Dong Migang.The P-N Junction Formation of NTD Silicon by Laser and Investigation of There Properties[J].Journal of Shanxi Teachers University,1993(1). |
| |
| Authors: | Wang Yongyue Xu Kefu Dong Migang |
| |
| Institution: | Wang Yongyue;Xu Kefu;Dong Migang |
| |
| Abstract: | In This paper,we present a new method to make The P--N Junetion in NTD silicon and inverstigation the electrical properties,such as,conductance tyne,sheet vesistance,Voctage--current characteristic. in order to illustrate above result we persent a model. |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
|
