以SiO2/Si为衬底的Ba1-xLaxNbyTi1-yO3薄膜的敏感特性

通过离子束溅射技术淀积在SiO2/Si衬底上的钛酸镧钡铌膜（Ba1-xLaxNbyTi1-yO3），制成集薄膜电阻和金属－绝缘体－半导体（MIS）电容为一体的传感器。实验结果表明，薄膜电阻在303－673K温度范围内对可见光和热具有良好的灵敏特性，同时MIS电容对相对湿度有很高的灵敏度。我们测试了此薄膜的光吸收特性，并得到了它的禁带宽度。最后，我们研究了薄膜电阻的阻抗温度频率特性和频率对MIS电容湿敏特性的影响。

Sensing Properties of Ba1-xLaxNbyTi1-yO3 Thin-Film on SiO2/Si Substrate

Barium lanthanum titanate-niobate (Ba1-xLaxNbyTi1-yO3, x=y=0.25%, mass fraction) film deposited on a SiO2/Si substrate by the argon ion-beam sputtering technique has been used to fabricate a thin-film resistor and a metal-insulator-semiconductor (MIS) capacitor by standard integrated-circuit technology. Measurements show that the film resistor has superior sensitivity for visible light and a thermal sensitivity within the range 303～673 K, while the MIS capacitor is highly sensitive to relative humidity. The optical absorption spectrum of the film has been measured and the bandgap of the film has been also determined. The effects of test frequency on the impedance of the film resistor at various temperatures and on the humidity-sensitive characteristics of the MIS capacitor have been investigated.