| 水化层对氮化硅膜pH－ISFET输出特性的影响 |
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| 引用本文： | 钟雨乐,刘涛.水化层对氮化硅膜pH－ISFET输出特性的影响[J].暨南大学学报,1994(1). |
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| 作者姓名： | 钟雨乐 刘涛 |
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| 作者单位： | 暨南大学电子工程系 |
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| 基金项目： | 广东省自然科学基金资助项目 |
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| 摘 要： | 对氮化硅膜ｐＨ－ＩＳＦＥＴ的输出特性与水化层的关系进行了一系列实验研究。若水化层的增长速率较大，器件的敏感灵敏度及其线性范围、响应速度都有明显的改善。水化层增长速率较高的敏感膜具有较大的时漂速率；时漂速率为一常数，与浸泡溶液无关。
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| 关 键 词： | 器件输出特性 敏感膜 水化层 |
THE EFFECTS OF HYDROLYSIS LAYER ON OUTPUT CHARACTERISTICS OF SILICON NITRIDE SENSITIVE FILM pH-ISFET |
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| Zhong Yulc,Liu Tao.THE EFFECTS OF HYDROLYSIS LAYER ON OUTPUT CHARACTERISTICS OF SILICON NITRIDE SENSITIVE FILM pH-ISFET[J].Journal of Jinan University(Natural Science & Medicine Edition),1994(1). |
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| Authors: | Zhong Yulc Liu Tao |
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| Abstract: | The Rclations between output characteristics of silicon nitride sensitive film pH-ISFET andhydrolysis layer are measured.The sensitivity and its linear response velocity of the device canbe effectively increased on account of higher growing speed of hydrolysis layer.The film withhigher growing speed of hydrolysis layer has higher drift speed yet.The drift speed of the de-vice is constant.It has nothing to do with the solution. |
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| Keywords: | output characterisics of pH-ISFET sensitive film hydrolysis layer |
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