| 4GHz微波低噪放大器的设计与仿真 |
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| 引用本文： | 赵萌.4GHz微波低噪放大器的设计与仿真[J].科技信息,2009(21):I0052-I0053. |
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| 作者姓名： | 赵萌 |
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| 作者单位： | 华东师范大学信息科学技术学院; |
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| 摘 要： | 文中介绍了一种基于GaAsMESFET的微波低噪放大器的设计方法。结合微波电路设计理论与仿真软件ADS2006对电路进行仿真和优化使电路在全频带内绝对稳定，原理图仿真指标达到较满意的结果，其中增益为15．112dB，噪声1．371dB。设计电路版图并对其进行协同仿真（co-simulation），并与原理图仿真结果进行比较和分析。该放大器可广泛应用于无线通信系统中。
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| 关 键 词： | 低噪放大器 ADS 双向共轭匹配 协同仿真 稳定性 版图 |
Design and Simulation 4GHz Microwave Low Noise Amplifier |
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| ZHAO Meng.Design and Simulation 4GHz Microwave Low Noise Amplifier[J].Science,2009(21):I0052-I0053. |
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| Authors: | ZHAO Meng |
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| Institution: | East Normal University;Shanghai;200241 China |
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| Abstract: | This paper introduce a method to design microwave amplifier based on GaAs MESFET.Combine the theory of microwave circuit with ADS2006,the circuit are well simulated and optimized and absolutely steady in full frequency field.The Gain is larger than 15dB and the Noise Figure is less than 1.5dB,which satisfy the requirement of design.Design the layout and co-simulate it and compare its result with schematic 's.This amplifier can be used widely in wireless communication system. |
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| Keywords: | Low Noise Amplifier ADS Inter-Conjugated Matching Co-Simulation Stability Layout |
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