| 磁控管V—I特性的近似分析及其应用 |
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| 引用本文： | 冯文荃.磁控管V—I特性的近似分析及其应用[J].南京大学学报(自然科学版),1990,26(4):596-602. |
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| 作者姓名： | 冯文荃 |
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| 作者单位： | 南京大学物理系 |
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| 摘 要： |
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| 关 键 词： | 磁控管 静态阻抗 动态阻抗 加速器 |
THE APPROXIMATE ANALYSIS OF MAGNETRON V-I CHARACTERISTICS AND ITS APPLICATIONS |
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| Feng Wenquan.THE APPROXIMATE ANALYSIS OF MAGNETRON V-I CHARACTERISTICS AND ITS APPLICATIONS[J].Journal of Nanjing University: Nat Sci Ed,1990,26(4):596-602. |
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| Authors: | Feng Wenquan |
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| Institution: | Department of Physics |
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| Abstract: | The V-I characteristics of a microwave magnetron have three different approximate equivalent models. One is the static impedance model which is a linear equivalent. The secand is a biased-diode model obtained with a power series. The last one is a small signal model gained by means of a Talor series expansion. These models have quite different char-acteristics and applications. This paper emphasizes their respective application limits, espec-ially the application of the small signal model in the accelerator area. |
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| Keywords: | magnetron static impedance dynamic impedance biased-diode small signal model pushing figure |
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