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| 纳米双栅MOSFETs的量子格林函数模拟 | |
| 引用本文： | 王伟,孙建平,顾宁.纳米双栅MOSFETs的量子格林函数模拟[J].东南大学学报(自然科学版),2006,36(6):917-919. |
| 作者姓名： | 王伟 孙建平 顾宁 |
| 作者单位： | 1. 东南大学生物电子学国家重点实验室,江苏省生物材料与器件重点实验室,南京,210096;南京邮电大学光电工程学院,南京,210003 2. 美国密西根大学电气工程和计算机科学系,安娜堡 3. 东南大学生物电子学国家重点实验室,江苏省生物材料与器件重点实验室,南京,210096 |
| 基金项目： | 国家自然科学基金资助项目(60371037,20573019,90406023,90406024) |
| 摘 要： | 采用一种量子动力学模型研究纳米MOSFET(场效应管)电流特性.该模型基于二维NEGF(非平衡格林函数)方程和Poisson方程自洽全量子数值解.使用该方法研究了纳米双栅MOSFET结构尺寸对电流特性的影响.模拟结果显示:越细长的沟道,器件的短沟效应越弱,器件的亚阈值斜率随栅氧化层增厚而加大.另外,通过分析器件不同区域的散射自能效应,得出减缓纳米双栅MOSFET电流性能下降的途径.所用模型具有概念清晰,求解稳定等特点.作为多体量子模型,本方法可应用于一维量子线及量子点阵列所构成的纳米器件,并有望在纳米MOSFET器件设计中得以应用. |
| 关 键 词： | 非平衡格林函数 双栅MOS 量子模型 |
| 文章编号： | 1001-0505（2006）06-0917-03 |
| 收稿时间： | 05 16 2006 12:00AM |
| 修稿时间： | 2006-05-16 |
Quantum modeling for nanoscale double gate MOSFETs based on Green's function |
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| Wang Wei,Sun Jianping,Gu Ning.Quantum modeling for nanoscale double gate MOSFETs based on Green''''s function[J].Journal of Southeast University(Natural Science Edition),2006,36(6):917-919. | |
| Authors: | Wang Wei Sun Jianping Gu Ning |
| Institution: | 1 State Key Laboratory of Bioelectronics, Jiangsu Laboratory for Biomaterials and Devices, Southeast University, Nanjing 210096, China;2Depaarnent of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, USA;3 College of Opto-Electronic Engineering, Nanjing University of Posts and T , Nanjing 210003, China |
| Abstract: | A quantum kinetic model based on two-dimensional(2D) non-equilibrium Green's functions(NEGF) solved self-consistently with Poisson's equations is developed to investigate the device behavior of nanoscale double-gate MOSFETs(metal-oxide-semiconductor field effect transistor).The influence of device dimensions on current characteristics has been studied.The simulated results indicate that thinner and longer channel can reduce short channel effects,while thicker gate oxide will lead to higher subthreshold slopes.In addition,scattering effects on the channel current degradation are evaluated using self-energies and approaches for improvement are indicated.The present model has the features of being conceptually simple and computationally stable,and is suitable for modeling various nanoscale devices including device structures consisting of quantum wires and quantum dot arrays,as well as the design of nanoscale MOSFETs. |
| Keywords: | NEGF(non-equilibrium Green's functions) double gate MOS quantum model |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |