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基于共享技术的电荷泵电路
引用本文:伍冬,潘立阳,段志刚,朱钧. 基于共享技术的电荷泵电路[J]. 清华大学学报(自然科学版), 2006, 46(4): 530-533
作者姓名:伍冬  潘立阳  段志刚  朱钧
作者单位:清华大学,微电子学研究所,北京,100084;清华大学,微电子学研究所,北京,100084;清华大学,微电子学研究所,北京,100084;清华大学,微电子学研究所,北京,100084
摘    要:为了减少芯片面积,提高电荷泵的增益,提出一种基于共享技术的电荷泵电路。通过改变两个子电荷泵的串并连接关系,既可以产生一种电压较高而电流驱动能力较小的负高压,也可以产生一种电压较低但是电流驱动能力很大的负高压,这不仅满足了系统在编程和擦除时对高压的不同需求,而且还节省了大约50%的芯片面积。电荷泵电路还采取了对其中P型M O S管的衬底电压进行动态控制的方法。模拟结果表明,该电荷泵的增益提高了大约14%。该电路特别适用于需要两种以上负高压以完成编程和擦除操作的快闪存储器。

关 键 词:电荷泵  共享  快闪存储器  驱动能力
文章编号:1000-0054(2006)04-0530-04
修稿时间:2005-04-04

Charge pump circuit based on the sharing technique
WU Dong,PAN Liyang,DUAN Zhigang,ZHU Jun. Charge pump circuit based on the sharing technique[J]. Journal of Tsinghua University(Science and Technology), 2006, 46(4): 530-533
Authors:WU Dong  PAN Liyang  DUAN Zhigang  ZHU Jun
Abstract:A charge pump circuit based on the sharing technique was developed which reduces the chip area while improving the gain.The circuit can generate two negative high voltages by changing the serial/parallel connection between the two sub-charge pumps.The technique not only gives high quality voltage signals,but also reduces the chip size of the charge pumps by 50%.An additional circuit was designed to dynamically control the substrate bias of the PMOS transistors.Simulation results show that the charge pump gain is increased by 14%.This charge pump design is suitable for flash memory circuits which use two different negative high voltages for program and erase operations.
Keywords:charge pump  sharing  flash memory  driving capability
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