| FeNiN薄膜的制备及结构与磁性分析 |
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| 引用本文： | 刘军,王合英,陈默轩,茅卫红,黄贺生.FeNiN薄膜的制备及结构与磁性分析[J].清华大学学报(自然科学版),2001,41(12):9-11. |
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| 作者姓名： | 刘军 王合英 陈默轩 茅卫红 黄贺生 |
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| 作者单位： | 清华大学物理系,北京,100084 |
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| 基金项目： | 国家自然科学基金资助项目 (5 980 2 0 0 5 ) |
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| 摘 要： | 为了提高 Fe Ni化合物的饱和磁化强度 ,采用离子束辅助溅射沉积的方法对 Fe Ni薄膜进行掺氮 (N)的研究。实验中发现 ,掺氮后所生成的 Fe Ni N薄膜在结构上同 Fe Ni合金有相似之处 :N不与 Ni化合 ;在小掺镍量下 Ni以替代方式存在于薄膜中 ,在大的掺镍量下 Fe Ni N薄膜将有特定的相变发生。在磁性方面 ,得到了饱和磁化强度为 2 .0 T的Fe Ni N薄膜。
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| 关 键 词： | Fe-Ni-N薄膜 饱和磁化强度 离子束辅助溅射沉积 |
| 文章编号： | 1000-0054(2001)12-0009-03 |
| 修稿时间： | 2000年7月21日 |
Preparation of a FeNiN film, its microstructure and its magnetic property analysis |
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| LIU Jun,WANG Heying,CHEN Moxuan,MAO Weihong,HUANG Hesheng.Preparation of a FeNiN film, its microstructure and its magnetic property analysis[J].Journal of Tsinghua University(Science and Technology),2001,41(12):9-11. |
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| Authors: | LIU Jun WANG Heying CHEN Moxuan MAO Weihong HUANG Hesheng |
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| Abstract: | The magnetic properties of FeNi compounds were improved by doting nitrogen onto FeNi films which were prepared by Ion Beam Aided Sputtering. Experiments showed that the FeNiN film structure is similar to that of bulk FeNi and the Nitrogen does not react with Nickle. The Nickle exists in the film by replacement at low Ni concentrations. Phase transformation occursed in the FeNiN film at high Ni concentrations. A FeNiN film was obtained with a saturation magnetization of about 2.0 T. |
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| Keywords: | Fe Ni N film high saturation magnetization ion beam aided sputtering deposition |
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