| 一款应用于LTE移动终端的射频功率放大器设计 |
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| 引用本文： | 王虹,周仁杰,刘洪刚.一款应用于LTE移动终端的射频功率放大器设计[J].科学技术与工程,2013,13(20):5801-5805. |
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| 作者姓名： | 王虹 周仁杰 刘洪刚 |
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| 作者单位： | 中国科学院微电子研究所,中国科学院微电子研究所,中国科学院微电子研究所 |
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| 基金项目： | 100 Talents Program of the Chinese Academy of Sciences |
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| 摘 要： | 基于WIN InGaP/GaAsHBT工艺,设计了一款应用于LTE移动终端的射频功率放大器。工作在AB类偏置状态,由三级放大电路级联构成,并带有温度补偿和线性化的偏置电路。芯片版图面积为1410×785μm2,电源电压为3.4V。仿真结果显示:功率增益大于30.1dB、1dB压缩点输出功率为31.2dB.m,在Band38(2570～2620)MHz内,输入回波损耗S11小于-15dB,S21大于30.1dB,输出回波损耗S22低于-25dB,1dB压缩点输出功率的功率附加效率高达36.6%。
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| 关 键 词： | LTE InGaP/GaAs HBT 射频功率放大器 1dB压缩点 功率增益 功率附加效率 |
| 收稿时间： | 2013/3/12 0:00:00 |
| 修稿时间： | 2013/3/28 0:00:00 |
Design of RF Power Amplifier Applied in LTE mobile handsets |
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| Wang Hong,Zhou Renjie and Liu Honggang.Design of RF Power Amplifier Applied in LTE mobile handsets[J].Science Technology and Engineering,2013,13(20):5801-5805. |
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| Authors: | Wang Hong Zhou Renjie and Liu Honggang |
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| Institution: | Institute of Microelectronics, Chinese Academy of Sciences,Institute of Microelectronics, Chinese Academy of Sciences |
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| Abstract: | A RF power amplifier (PA) is designed applied in LTE mobile handsets based on WIN InGaP/GaAs technology. The PA consists of three stage amplifiers biased in class AB with temperature compensation and linearized bias circuit. The area of layout is , and the supply voltage is 3.4 V. Simulation results show that the power amplifier has a power gain over 30.1 dB, an output 1 dB compression point (output P1dB) of 31.2 dBm. In band 38(2570~2620MHz), S11 is lower than -15dB, the S21 is higher than 30.1 dB, S22 is lower than -25dB, and the efficiency at the 1dB compression point is 36.6%. |
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| Keywords: | LTE InGaP/GaAs HBT RF Power Amplifier P1dB Power Gain PAE |
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