| 非晶硅薄膜的制备及晶化研究 |
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| 引用本文： | 段良飞,张力元,杨培志,化麒麟,邓双,廖华. 非晶硅薄膜的制备及晶化研究[J]. 云南师范大学学报(自然科学版), 2013, 33(2): 16-19 |
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| 作者姓名： | 段良飞 张力元 杨培志 化麒麟 邓双 廖华 |
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| 作者单位： | 可再生能源材料先进技术与制备教育部重点实验室,云南昆明650092;云南师范大学太阳能研究所,云南昆明650092 |
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| 基金项目： | 国家自然科学基金联合基金资助项目 |
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| 摘 要： | 采用磁控溅射技术首先在玻璃基片、单晶硅片上溅射非晶硅薄膜再在其表面溅射铝膜,并用快速退火炉在不同温度下进行退火。利用台阶仪、拉曼散射光谱(Raman)仪和X射线衍射(XRD)仪对薄膜进行性能表征。结果表明:在功率120W,气压1.5～2.5pa,时间为3.5～4.5h的条件下可制备得非晶硅薄膜,Al诱导能降低晶化温度,并在500～600℃间存在一最佳晶化温度。
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| 关 键 词： | 非晶硅薄膜 磁控溅射 铝诱导晶化 多晶硅 |
Study on the Preparation and Crystallization of Amorphous Silicon Film |
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| DUAN Liang-fei , ZHANG Li-yuan , YANG Pei-zhi , HUA Qi-lin , DENG Shuan , LIAO Hua. Study on the Preparation and Crystallization of Amorphous Silicon Film[J]. Journal of Yunnan Normal University (Natural Sciences Edition), 2013, 33(2): 16-19 |
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| Authors: | DUAN Liang-fei ZHANG Li-yuan YANG Pei-zhi HUA Qi-lin DENG Shuan LIAO Hua |
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| Affiliation: | 1,2(1.Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology of Ministry of Education of China,Kunming 650092,China; 2.Solar Energy Research Institute,Yunnan Normal University,Kunming 650092,China) |
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| Abstract: | Morphous silicon thin films and luminum thin films were deposited on glass substrate and monocrystalline silicon substrate by magnetron sputtering.The thin films were characterized by Profile-system,Raman scattering spectroscopy（Raman）and X-ray diffraction（XRD）.Results show amorphous silicon thin film can be well prepared by magnetron sputtering at 120w,1.5~2.5pa Ar pressure for 3.5~4.5h.Al induction can reduce crystallization temperature.Preliminary research shows that an optimal crystallization temperature is existing in the temperature range of 500-600℃,with aluminum induction. |
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| Keywords: | Amorphous silicon thin film Magnetron Sputtering Aluminum-induced crystallization Polycrystalline silicon |
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