| 高电子迁移率晶体管的光照特性分析 |
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| 引用本文： | 吕永良,周世平,徐得名. 高电子迁移率晶体管的光照特性分析[J]. 上海大学学报(自然科学版), 2000, 6(5): 415-419 |
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| 作者姓名： | 吕永良 周世平 徐得名 |
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| 作者单位： | 1. 上海大学理学院上海 201800
2. 上海大学通信与信息工程学院上海 201800 |
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| 基金项目： | 国家自然科学基金资助项目(69671013) |
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| 摘 要： | 以光照下耗尽型ＡｌＧａＡｓ／ＧａＡｓ高电子迁移率晶体管为例，考虑了光生载流子对半导体内电荷 影响和光压效应，采用器件的电荷控制模型，分析了光照对器件夹断电压、二维电子气（２－ＤＥＧ）浓度、Ｉ－Ｖ特性以及跨导的影响，与无光照的情况相比较，夹断电压变小）绝对值变大），二维电子浓度增大，从而提高了器件的电流增益，跨导对光照不敏感。
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| 关 键 词： | 高电子迁移率晶体管 光生载流子 光照特性 |
| 文章编号： | 1007-2861(2000)04-0415-05 |
| 修稿时间： | 1999-11-01 |
Analysis of Properties of High-Electron-Mobility-Transistor under Optical Illumination |
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| LU Yong-liang,ZHOU Shi--ping,XU De--ming. Analysis of Properties of High-Electron-Mobility-Transistor under Optical Illumination[J]. Journal of Shanghai University(Natural Science), 2000, 6(5): 415-419 |
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| Authors: | LU Yong-liang ZHOU Shi--ping XU De--ming |
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| Abstract: | We studied dynamical behaviors of the depletion--mode AlGaAs/GaAs high electron mobility transistor (HEMT) under optical illumination. Photovoltage and the effect of optical generated carries on space charge concentration had been taken into account. Using the chargecontrolling model, we analyzed the optical effect on device's pinch--off voltage, sheet concentration of two dimensional electron gas (2-DEG), I-V characteristic and transconductance as well. Compared with the dark condition, the pinch-off voltage is reduced and the sheet concentration of 2--DEG is increased, which results in an increase in the current gain while the transconductance is insensitive to optical illumination. |
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| Keywords: | HEMT photovoltage optical generated carries charge--controlling model 2--DEG |
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