电力半导体器件体内诸物理量对正向电压衰减曲线尾部的影响

本文主要研究不同结构工艺参数的电力半导体器件,其体内扩散电流、空间电荷区复合电流、势垒电容、扩散电容、渡越电容诸物理量对正向电压衰减曲线尾部的影响及其变化规律。为进一步研究衰减曲线的变化规律和测试电力半导体器件在不同注入水平下的载流子寿命值,提供了理论依据。

FACTORS EFFECTING ON OCVD CURVE TAILS

The study of the open-circuit voltage-decay curve has a significant importance for determining the minority carrier lifetime in the quasineutral base of power rectifiers and thyristors. In the present work, a theoretical analysis has been carried out to investigate the possible mechanisms responsible for the observed peculiarities in the OCVD curves, by including the transition carrier capacitance of the depletion region. This capacitance bas been used in addition to the well-known and widely discussed ceffects, such as the space-charge capacitance due to ionized impurities recombination urrent, and base region effects. The inclusion of the transition carrier capacitance has been done for the first time.