| PECVD沉积氮化硅薄膜的透过率研究 |
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| 引用本文： | 宋江婷.PECVD沉积氮化硅薄膜的透过率研究[J].科技咨询导报,2012(32):13-15,17. |
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| 作者姓名： | 宋江婷 |
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| 作者单位： | 泉州轻工职业学院机电工程系,福建晋江362200 |
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| 摘 要： | 研究了用PECVD薄膜沉积设备制作氮化硅薄膜的透过率。通过改变沉积工艺参数,研究了沉积温度、射频功率、SiH4流量和腔体压强对薄膜透过率曲线的影响,并分析影响原因。
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| 关 键 词： | 氮化硅薄膜 透过率 PECVD |
Experimental Study of the Transmittance of Silicon Nitride Films Deposited by PECVD |
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| SONG Jiangting.Experimental Study of the Transmittance of Silicon Nitride Films Deposited by PECVD[J].Science and Technology Consulting Herald,2012(32):13-15,17. |
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| Authors: | SONG Jiangting |
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| Institution: | SONG Jiangting (Quanzhou College Of Technology, Fujian Jinjiang 362021, CHN) |
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| Abstract: | The transmittance on silicon nitride thin films that were fabricated by PECVD are studied in this paper.A serial of detailed experiment s are carried out, which mainly studied how the processing parameters-deposit temperature, RF power, flow of SiH4 and Chamber pressure - influence the transmittance of silicon nitride films, and analysis the reason. |
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| Keywords: | silicon nitride thin films transmittance PECVD |
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