| 半导体Ge的能带计算 |
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| 引用本文： | 刘建军.半导体Ge的能带计算[J].湖南工程学院学报(自然科学版),2011,21(1):14-15,19. |
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| 作者姓名： | 刘建军 |
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| 作者单位： | 辽宁铁道职业技术学院,锦州,121000 |
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| 摘 要： | 用紧束缚1]方法计算了Ge晶体能带Ge的点能量.计算结果与Chadi2]的实验值及吻合较好,与K·C Pondoy3]的计算值比较接近,比Cohen and TR·Bergstresser4]的计算值精确.
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| 关 键 词： | 半导体 能带 局域势 非局域势 |
Energy Band Calculation of Semiconductor Ge |
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| LIU Jian-jun.Energy Band Calculation of Semiconductor Ge[J].Journal of Hunan Institute of Engineering(Natural Science Edition),2011,21(1):14-15,19. |
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| Authors: | LIU Jian-jun |
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| Institution: | LIU Jian-jun(Liaoning Railway Vocational and Technical College,Jinzhou 121000,China) |
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| Abstract: | The energy of point is calculated with tight binding method.The result is consistent with the experimental value of Chadi,closer to the calculated value of KoC Pandey and more precise than the calculated value of Cohen and T Bergstresser. |
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| Keywords: | semiconductor energy band local potential not local potential |
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