电子封装器件翘曲问题的数值分析

考虑玻璃态转变温度（tg）对材料性能的直接影响，运用三维有限元分析法分别对单芯封装器件及多芯封装器件由于热变形引起的翘曲问题进行了分析，同时着重探讨了封装器件中各种材料的尺寸变化对翘曲的影响．计算结果表明：在单芯封装中，基底与芯片厚度比和封装材料与芯片厚度比的变化对翘曲影响较大，基底与芯片面积比和粘结层与芯片高度比的变化对整体翘曲影响较小；在多芯封装中，随着芯片厚度的增加，整体翘曲减少，而粘结层的厚度对整体翘曲影响较小，基底尺寸影响较大．这一结果为进一步封装设计提供了理论依据．

Electronic Package Warpage Simulated with Numerical Method

In view of the effect of glass phase transition temperature(t_g)on material properties,three-dimensional finite element method has been employed in analyzing the warpage of single chip and multi-chip molding.The numerical results show that the ratio of lead-frame and die height has an obvious effect on the warpage of chip,while the ratio of lead-frame and die area,adehesive layer and die height has less effect on it.In the multi-chip processing,the warpage decreases with the increasing of chip height and the adhesive layer's height has less effect on the warpage.The numerical analysis results are applicable to the practical design of reliable electronic package.