| 在大功率应用时IGBT和IGCT的选择 |
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| 引用本文： | 柯国琴,柯勇. 在大功率应用时IGBT和IGCT的选择[J]. 芜湖职业技术学院学报, 2009, 11(2): 42-45 |
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| 作者姓名： | 柯国琴 柯勇 |
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| 作者单位： | 1. 合肥工业大学,安徽合肥,230009
2. 芜湖职业技术学院,安徽芜湖,241000 |
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| 摘 要： | 在不同的应用领域，由于较大的功率和较高的频率冲击，对半导体器件的要求有很多情况下是矛盾的，因而单一器件无法解决这一矛盾。尽管过去和今后的器件类型很多，但今后的开关器件在600V以上的场合应用时，无外乎两三种：IGBT,IGCT和GTO。
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| 关 键 词： | 大功率 高频率 IGBT IGCT |
The Selection of IGBT and IGCT at High-power Applications |
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| KE Guo-qin,KE Yong. The Selection of IGBT and IGCT at High-power Applications[J]. Journal of Wuhu Vocational Institute of Technology, 2009, 11(2): 42-45 |
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| Authors: | KE Guo-qin KE Yong |
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| Affiliation: | KE Guo-qin, KE Yong |
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| Abstract: | The requirements of the semiconductor device are contradictory in different application areas, because of the impact of larger power and higher frequency. A single device can not solve this contradiction. Although there are a lot of device types both in the past and in the future, the subsequent switching device used at 600V or more occasions can be reduced to three kinds： IGBT, IGCT and GTO. |
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| Keywords: | IGBT IGCT |
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