| 硅晶体中禁带宽度与应力关系的光学研究 |
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| 引用本文： | 陈蒲生,梁汉成,郑恒.硅晶体中禁带宽度与应力关系的光学研究[J].华南理工大学学报(自然科学版),1988(4). |
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| 作者姓名： | 陈蒲生 梁汉成 郑恒 |
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| 作者单位： | 华南理工大学物理系，华南理工大学物理系，华南理工大学物理系 |
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| 摘 要： | 本文采用光电导光谱分布法和红外光弹法初步研究了硅晶体中禁带宽度与应力的关系。对数块硅晶体进行不同条件的热处理,测试了禁带宽度的变化以及应力状态的变化。发现半导体硅晶体中禁带宽度与应力有明显的对应关系:存在应力时,禁带宽度增加;清除应力后,禁带宽度减少。文中还对实验结果作了理论分析。
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| 关 键 词： | 光电导效应 应力 能量转换 禁带宽度 |
AN OPTICAL STUDY OF RELATION BETWEEN FORBIDDEN BAND GAP AND STRESS IN SILICON CRYSTALS |
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| Chen Pusheng,Liang Hancheng and Zheng Heng Dept.of Physics,South China Univ.of Tech..AN OPTICAL STUDY OF RELATION BETWEEN FORBIDDEN BAND GAP AND STRESS IN SILICON CRYSTALS[J].Journal of South China University of Technology(Natural Science Edition),1988(4). |
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| Authors: | Chen Pusheng Liang Hancheng and Zheng Heng Deptof Physics South China Univof Tech |
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| Abstract: | This paper deals with the relation between forbidden band gapand stress in silicon crystals with the method of photoconductivespectrum distribution and the method of infrared photoelasticity.Theauthors tested the changes of the width of the forbidden band gap andstress state for a number of silicon crystals with various thermaltreatments.It is found that there exists apparent relation betweenthe forbidden gap and the stress in semiconductor silicon crystals,that the forbidden band gap will widen as the stress is introducedand it will narrow again after the stress is eliminated.In this paperthe theoretical analyses of these experimental results have also beenmade. |
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| Keywords: | Photoconductive effect Stress energy conversion forbidden band gap |
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