| X波段低噪声放大器设计 |
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| 引用本文： | 石生玉,逯贵祯,李钦,葛媛媛.X波段低噪声放大器设计[J].中国传媒大学学报,2011(1). |
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| 作者姓名： | 石生玉 逯贵祯 李钦 葛媛媛 |
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| 作者单位： | 中国传媒大学信息工程学院; |
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| 摘 要： | 从获取最小噪声系数角度来进行电路设计,采用Avago公司的0.2um GaAs pHEMT工艺芯片(T=18GHz),设计了工作于X波段(9-11GHz)的两级宽带低噪声放大器。测试结果为:在9-11GHz,噪声系数小于1.15dB,最小噪声系数在9.8GHz为1.015dB,功率增益在所需频段9-11GHz大于24dB,输入和输出回波损耗均小于-10dB。
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| 关 键 词： | 低噪声放大器 噪声系数 温度补偿 |
The Design of X-Band Low-Noise Amplifier |
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| SHI Sheng-yu,LU Gui-zhen,LI Qin,GE Yuan-yuan.The Design of X-Band Low-Noise Amplifier[J].Journal of Communication University of China Science and TEchnology,2011(1). |
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| Authors: | SHI Sheng-yu LU Gui-zhen LI Qin GE Yuan-yuan |
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| Institution: | SHI Sheng-yu,LU Gui-zhen,LI Qin,GE Yuan-yuan(School of Information Technology,Communication University of China,Beijing 100024,China) |
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| Abstract: | A broadband,X-band two stage low noise amplifier is designed,with the 0.2um GaAs pHEMT transistor of Avago company.It is designed with the minimized noise figure.The result is successful to achieve the design objective.It provides more than 24dB power gain and less than 1.15 dB noise figure at the frequences from 9-11GHz.The least NF is 1.015dB at 9.8GHz.The output and input return loss is less than-10dB. |
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| Keywords: | low noise amplifier noise figure temperature compensation |
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