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半导体光磁电效应与系统的非线性特征
引用本文:韦洛霞,邵明珠. 半导体光磁电效应与系统的非线性特征[J]. 东莞理工学院学报, 2006, 13(1): 9-12
作者姓名:韦洛霞  邵明珠
作者单位:东莞理工学院,电子工程系,广东,东莞,523808;东莞理工学院,电子工程系,广东,东莞,523808
摘    要:从Shockley-Read统计出发,引入载流子寿命与浓度的相关性,把载流子的输运方程化为了二阶非线性微分方程,用摄动法找到了方程的一阶近似解,并计算了半导体材料的短路电流和光导电流,揭示了大信号情况下半导体光磁电效应的非线性特征.

关 键 词:半导体  非线性  光磁电效应
文章编号:1009-0312(2006)01-0009-04
收稿时间:2005-11-18
修稿时间:2005-11-18

Photo-Magnetoelectric Effect in Semiconductors and Its Nonlinear Properties
WEI Lou-xia,SHAO Ming-zhu. Photo-Magnetoelectric Effect in Semiconductors and Its Nonlinear Properties[J]. Journal of Dongguan Institute of Technology, 2006, 13(1): 9-12
Authors:WEI Lou-xia  SHAO Ming-zhu
Abstract:The equation of the charged carriers through a semiconductor was reduced to a second order non-linear differential equation by using the injection-level dependent with lifetime which was derived from Shockley-Read statistics. The l-st order approximation solution is derived by the perturbation method. The PME short-circuit current and the photoconductance in a seimiconductor are calculated in 1-st approximation.The non-linear properties of the photo-magnetoelectric effect in the case of large signal are discussed.
Keywords:seimiconductor   nonlinearity   photo-magnetoelectric effect
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