| 掺杂a-Si∶H薄膜的非平衡热缺陷研究 |
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| 引用本文： | 王印月,许怀哲,吴现成,陈光华. 掺杂a-Si∶H薄膜的非平衡热缺陷研究[J]. 兰州大学学报(自然科学版), 1992, 0(1) |
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| 作者姓名： | 王印月 许怀哲 吴现成 陈光华 |
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| 作者单位： | 兰州大学物理系 兰州730000(王印月，许怀哲，吴现成)，兰州大学物理系 兰州730000(陈光华) |
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| 摘 要： | 通过直流暗电导率温度依赖关糸σ(T)和光吸收谱的测量,研究了退火降温速率对掺杂a—Si∶H薄膜中热缺陷的影响.
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| 关 键 词： | 掺杂氢化非晶硅 冷却速率 热缺陷 光吸收谱 |
A Study on Unequilibrium Thermal Defect in Doped a-Si:H Films |
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| Wang Yinyue,Xu Huaizhe,Wu Xiancheng,Chen Guanghua. A Study on Unequilibrium Thermal Defect in Doped a-Si:H Films[J]. Journal of Lanzhou University(Natural Science), 1992, 0(1) |
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| Authors: | Wang Yinyue Xu Huaizhe Wu Xiancheng Chen Guanghua |
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| Abstract: | The temperature dependence of the dc dark conductivity and spectral dependence of the absorption coefficient were measured.We haveinvestigated the effect of different cooling rates after annealing uponthe thermal defect of doped a-Si:H films. |
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| Keywords: | doped hydrogenated amorphous silicon cooling rate thermal defect light-absorbed spectrum |
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