全化学溶液法制备SrTiO3缓冲层

 化学法制备SrTiO₃薄膜成本低、效率高，适合用于YBa₂Cu₃O_7-δ（YBCO）涂层导体的缓冲层。采用全化学溶液沉积法在Ni-5W金属基带上外延生长了SrTiO₃（STO）缓冲层薄膜。以乙酸盐、钛酸丁酯为原料配制均匀稳定的STO种子层、La_xSr_1-xTiO₃种子层和STO 缓冲层前驱溶液。研究了STO 种子层薄膜厚度对在STO/Ni-5W（200）上沉积STO 外延薄膜性能的影响，结果表明，在880℃烧结温度下制备的3 层STO 种子层上可以制备出表面光滑平整、具有（200）择优取向的STO 缓冲层。尝试将La 元素掺入STO 中制得稳定的LSTO 前驱液，在LSTO/Ni-5W 结构上制备了具有（200）择优取向的STO 缓冲层薄膜，可作为YBa₂Cu₃O_7-δ涂层导体的缓冲层。

Preparation of SrTiO3 Buffer Layer by Chemical Solution Deposition

The SrTiO₃ films prepared by chemical method possess features of low-cost and efficiency, and they are a promising buffer layer for YBCO coated conductors. STO buffer layers were prepared on Ni-5W substrate by chemical solution deposition. Acetate and tetrabutyl titanate were used as precursors to synthesize the precursor solutions of STO seed layers, La_xSr_1-xTiO₃ seed layers and STO buffer layers. Effect of the thickness of STO seed layers on the properties of SrTiO₃ epitaxial films prepared on STO/Ni-5W(200) structures was studied. The results showed that three multilayer STO seed layers were sintered at 880℃ which was favorable to fabricate (200)-oriented STO films with smooth surface. When La was added into STO, stabilized LSTO precusor solution could be obtained, and highly (200)-oriented STO buffer films were prepared on LSTO/Ni-5W structures. They can be a promising buffer layer for YBa₂Cu₃O_7-δ coated conductors.