二次击穿效应

论述了半导体器件工作在二次击穿区域内的特性，研究和总结了可见效应及电效应，这些效应与器件结构及各种工作条件下的电场及载流子分布有关，证明在具有中等和高电阻率的厚集电极情况下，可见损坏面积大，而电变化及损坏较之薄集电极外延层的情况小．

The Secondery Breakdown Effect

The semiconductor device characteristics while operating in the secondary breakdown (S.B.) region were reviewed.The effects both visible and electrical,were investigated and related to the electrical fields and carrier distribution in various operating conditions.It was shown that in the case of a thick collector with medium or high resistivity the visible damage was extensive,while the electrical changes and damage were smaller than in the case of thin collector epitaxial layers.