采用介质谐振器的高稳定度GaAs FET振荡器

在对介质谐振器特性及其反馈电路特性分析的基础上，采用微波集成电路技术研制出一种新型的用介质谐振器作为反馈电路且具有高频率稳定度的GaAs FET振荡器，并考虑了该振荡器的偏置电路，结果表明，该振荡器具有大于1000的外部品质因素；在振荡频率为11．85GHz，输出功率为70mW时，其效率为20％，大于1000MHz的调谐范围，用同样的微带电路形式，用5种不同的介质谐振器可以得到9－14GHz的振荡频率，在－20℃-60℃温度范围内可以得到低于150kHz/℃的高频率稳定度。

A Highly Stabilized GaAs FET Oscillator Using a Dielectric Resonator Feedback Circuit

On the basis of analysis of the dielectric resonator and the properties of feedback circuit, a new type of highly stabilized GaAs FET oscillator has been developed using a dielectric resonator and a stabilization resistor in the feedback circuit has been developed. In considering the deviation circuit of the oscillator,the results indicate that the GaAs FET oscillator fabricated with a microwave integrated circuit has a high external quality of more than 1 000. In the case of high efficiency of 20 percent with 70 mW output power at 11.85 GHz; a wide tuning range is more than 1 000 MHz; in the case of a wide oscillator frequency from 9 to 14 GHz with same MIC pattern by using five dielectric resonators of different sizes. A high frequency stability as low as 150 kHz in the temperature range is from -20 to +60.