| VDMOSFET特征导通电阻实用物理模型 |
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| 引用本文： | 季春霖.VDMOSFET特征导通电阻实用物理模型[J].辽宁大学学报(自然科学版),2004,31(4):375-378. |
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| 作者姓名： | 季春霖 |
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| 作者单位： | 辽宁大学,物理系,辽宁,沈阳,110036 |
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| 摘 要： | 较系统地分析了正方形单胞结构VDMOSFET的特征导通电阻与结构参数间的关系.详细地介绍了一种新型实用的VDMOSFET的特征导通电阻的物理解析模型,并对模型给出的理论值与实验结果进行了比较,二者吻合得很好.
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| 关 键 词： | VDMOSFET 特征导通电阻 实用物理模型. |
| 文章编号： | 1000-5846(2004)04-0375-04 |
A Specific on-resistance Functional Physical Model of VDMOSFET |
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| JI Chun,lin.A Specific on-resistance Functional Physical Model of VDMOSFET[J].Journal of Liaoning University(Natural Sciences Edition),2004,31(4):375-378. |
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| Authors: | JI Chun lin |
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| Abstract: | The connection between the specific on resistance and structural parameters for the square cell VDMOSFET is systematically analyzed. A novel physical analytic model for the specific on resistance of VDMOSFET is presented in detail. The theory result of the model is shown to be in excellent agreement with the measured data. |
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| Keywords: | VDMOSFET specific on resistance |
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