| 半导体材料和器件的少子扩散长度随工艺跟踪测量 |
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| 引用本文： | 陈朝. 半导体材料和器件的少子扩散长度随工艺跟踪测量[J]. 厦门大学学报(自然科学版), 1995, 34(5): 723-726 |
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| 作者姓名： | 陈朝 |
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| 作者单位： | Dept.of Phys， |
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| 基金项目： | 国家自然科学基金和国家教委资助项目 |
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| 摘 要： | 在同一设备上综合地应用表面光伏谱、结光伏谱和光电流谱三种方法对半导体材料和器件的少子扩散长度做随工艺的非破坏性跟踪测量．本方法具有设备简单、方法容易、不破坏样品等优点，可作为监测材料质量和器件工艺水平的重要手段．
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| 关 键 词： | 跟踪测量，少子扩散长度，半导体材料，器件 |
Following Measurement on the Minority Carrier Diffusion Length of Semiconductor Materials and Devices with Techological Process |
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| Chen Chao. Following Measurement on the Minority Carrier Diffusion Length of Semiconductor Materials and Devices with Techological Process[J]. Journal of Xiamen University(Natural Science), 1995, 34(5): 723-726 |
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| Authors: | Chen Chao |
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| Abstract: | One syntetic method for measuring minority carrier diffusion lengths ofsemiconductor materials and devices following up technological process have been advanced byusing surface photovoltic spectrum, junction photovoltic spectrum and photocurrent spectrumetc. three methods on one measuring instrument.This method possessed these advantages : instru-ment is simple,method is easy and samples are no destroies.This method can be acted as impor-tant means for testing material qualities and device technological levels. |
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| Keywords: | Following measurement Minority carrier diffusion lengths semiconductormetrials and devices |
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