| 带p-n结半导体器件飘流扩散模型的拟中性极限 |
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| 引用本文： | 严正香,陈守信,韩小森. 带p-n结半导体器件飘流扩散模型的拟中性极限[J]. 河南科学, 2006, 24(6): 781-789 |
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| 作者姓名： | 严正香 陈守信 韩小森 |
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| 作者单位： | 信阳职业技术学院,数学与计算机科学系,河南,信阳,464000;河南大学,数学与信息科学学院,河南,开封,475001 |
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| 基金项目： | 国家自然科学基金;河南省杰出青年科学基金 |
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| 摘 要： | 研究了模拟带p-n结的绝缘半导体器件的双极飘流扩散方程组的德拜长度、消失极限(拟中性极限).同时给出了扩散方程组的极限解.
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| 关 键 词： | 拟中性极限 飘流扩散方泊松程组 p-n结 半导体 |
| 文章编号： | 1004-3918(2006)06-0781-09 |
| 收稿时间： | 2006-06-17 |
| 修稿时间： | 2006-06-17 |
Quasineutral Limit of Drift-Diffusion Model for p-n Junction Semiconductor Devices |
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| YAN Zheng-xiang,CHEN Shou-xin,HAN Xiao-sen. Quasineutral Limit of Drift-Diffusion Model for p-n Junction Semiconductor Devices[J]. Henan Science, 2006, 24(6): 781-789 |
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| Authors: | YAN Zheng-xiang CHEN Shou-xin HAN Xiao-sen |
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| Affiliation: | 1. Department of Mathematics and Computer Science, Xinyang Vocational and Technical College, Xinyang 464000, 2. College of Mathematics and Information Science, Henan University, Kaifeng 475001, China |
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| Abstract: | In this paper the vanishing Debye length limit(space charge neutral limit) of the bipolar drift-diffusion equations modelling insulated semiconductor devices with p-n junctions(i.e.with a fixed bipolar background charge) is studied.The limit solution of the drift-diffusion equations is also presented here. |
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| Keywords: | quasineutral limit drift-diffusion-Poisson equations p-n junction semiconductors |
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