| 横向槽栅双极晶体管的闩锁特性研究 |
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| 引用本文： | 蔡军 Joh.,KOS.横向槽栅双极晶体管的闩锁特性研究[J].中国科学技术大学学报,1999,29(4):481-486. |
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| 作者姓名： | 蔡军 Joh. KOS |
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| 作者单位： | 中国科学技术大学基础物理中心(蔡军)，香港科学技术大学电机电子工程系(JohnnyK.O.Sin) |
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| 摘 要： | 提出一种新颖的横向槽栅双极晶体管（ Ｌ Ｔ Ｇ Ｂ Ｔ） 结构．此结构可明显改善器件的闩锁效应．通过数值模拟，比较了 Ｌ Ｔ Ｇ Ｂ Ｔ 结构与 Ｌ Ｉ Ｇ Ｂ Ｔ 结构的闩锁电流密度大小，讨论了 Ｌ Ｔ Ｇ Ｂ Ｔ 结构闩锁电流密度与该结构的ｎ ＋ 和ｐ ＋ 阴极区域设计的关系．在相同５ 微米ｎ ＋ 阴极长度下， Ｌ Ｔ Ｇ Ｂ Ｔ 结构闩锁电流密度比 Ｌ Ｉ Ｇ Ｂ Ｔ 结构提高了７ ．７ 倍， Ｌ Ｔ Ｇ Ｂ Ｔ结构闩锁电流密度大小随槽栅与ｐ ＋ 阴极之间距离减小而增大．
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| 关 键 词： | 闩锁效应 槽栅 功率晶体管 |
Latch up Characteristics of a Lateral Trench Gate Bipolar Transistor |
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| CAI Jun.Latch up Characteristics of a Lateral Trench Gate Bipolar Transistor[J].Journal of University of Science and Technology of China,1999,29(4):481-486. |
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| Authors: | CAI Jun |
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| Abstract: | In this paper, a new conductivity modulated power transistor, called Lateral Trench Gate Bipolar Transistor (LTGBT), is presented. The current at which the latch up occurs in the structure is estimated in comparison with that of the LIGBT. The latch up current density for the LTGBT exhibits more than 7.7 times improvement over the LIGBT. The dependence of the latch up current density on the design of the n and p cathode regions of the structure is also examined. The maximum controllable latch up current density is found to increase with decreasing the space between the trench gate and the p cathode. |
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| Keywords: | latch up effect trench gate power transistor |
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