| SnO2：F透明导电薄膜及其物理特性 |
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| 引用本文： | 胡启富,林秀森.SnO2：F透明导电薄膜及其物理特性[J].厦门大学学报(自然科学版),1990,29(5):525-528. |
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| 作者姓名： | 胡启富 林秀森 |
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| 作者单位： | 厦门大学物理学系
(胡启富)，厦门大学物理学系(林秀森) |
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| 摘 要： | 本文中报道优质SnO_2:F透明导电薄膜的制备方法,通过对薄膜透射率和电导(方块电阻)的测量分析,研究薄膜特性与工艺条件的关系,探讨最佳工艺条件和薄膜形成规律。提出一种SnO_2:F 晶体缺陷结构模型,可以较好解释电导随 F掺杂浓度的变化结果。
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| 关 键 词： | SnO2：F 导电 薄膜 物理特性 透明 |
Study of SnO_2:F Transparent Conducting Thin Films and Their Physical Properties |
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| Hu Qifu Lin Xiuscn.Study of SnO_2:F Transparent Conducting Thin Films and Their Physical Properties[J].Journal of Xiamen University(Natural Science),1990,29(5):525-528. |
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| Authors: | Hu Qifu Lin Xiuscn |
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| Institution: | Hu Qifu Lin Xiuscn |
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| Abstract: | This paper reports preparation method of quality Sn02:F transparent conducting thin films. Base on the measures and analyses of the transmittance and sheet resistivity of Sn02:F films, we study relations between the properties and technological conditions of the films, explore the optimal technological conditions and formed law of the films. We have put forward a structural motel of defects in Sn02:F crystal which can fine explain changes of conductance with the concentration of fluorine dopant. |
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| Keywords: | Sn02:F transparent conducting films Spray pyrolysis method Sheet resistivity |
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