| 平面型电力电子器件场环终端的优化设计与试验研究 |
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| 引用本文： | 张少云,何润林.平面型电力电子器件场环终端的优化设计与试验研究[J].西安交通大学学报,1996,30(10):1-9. |
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| 作者姓名： | 张少云 何润林 |
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| 作者单位： | 西安交通大学 |
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| 基金项目： | 国家“八五”科技攻关资助项目． |
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| 摘 要： | 对平面型电力电子器件场环终端进行了优化设计与试验研究，提出了用混合因子Ｍｘ（载流子密度与固定电荷密度之比）作为判断理想耗尽区近似是否合理的指标，采用零场强度边界判定法，开发出能在３８６型或４８６型微机上进行模拟器件反偏状况的优化设计程序，根据设计结果制作了几种不同结构的场环器件，以测量其实际耐压，单结在１ｋＶ左右，改进后的方案用于高压ＳＩＴＨ器件的研制，耐压在１．２ｋＶ左右，最高可达１．５ｋＶ。
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| 关 键 词： | 场环 优化设计 电力电子器件 半导体器件 |
OPTIMUM DESIGN AND EXPERIMENT ON BREAKDOWN VOLTAGE OF PLANAR POWER ELECTRON DEVICES WITH LIMIT FIELD RING |
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| Zhang,Shaoyun,He,Runlin,Xu,Chuanxiang.OPTIMUM DESIGN AND EXPERIMENT ON BREAKDOWN VOLTAGE OF PLANAR POWER ELECTRON DEVICES WITH LIMIT FIELD RING[J].Journal of Xi'an Jiaotong University,1996,30(10):1-9. |
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| Authors: | Zhang Shaoyun He Runlin Xu Chuanxiang |
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| Abstract: | The optimum structure design and experiment are presented for planar power electron devices with limit field ring termination on breakdown voltage. The mixed factor M x is proposed to determine whether the depeletion region approximation can be used for numerical method. A program has been developed which can be used to calculate the breakdown voltage of HV silicon devices using microcomputer. According to the design results, some kinds of devices are manufactured, and the breakdown voltage of single junction reaches about 1 kV. Improved structure is used for high voltage static induction thyristor (SITH), and the breakdown voltage is 1 2 kV, the maximum being 1 5 kV. |
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| Keywords: | field ring optimum design HV device |
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