| 半导体掺杂分布精细结构的测量技术研究 |
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| 引用本文： | 孙志刚,李同合.半导体掺杂分布精细结构的测量技术研究[J].西安交通大学学报,1996,30(9):35-40. |
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| 作者姓名： | 孙志刚 李同合 |
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| 作者单位： | 西安交通大学 |
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| 摘 要： | 论述了一种采用数控精细扫描电压源的电容－电压（Ｃ－Ｖ）测量系统，利用该系统可以测量硅及砷化镓样品表面层的掺杂分布的精细结构，为半导体器件和集成电路芯片的设计与制造工艺的优化提供可靠的依据，测试系统采用ＰＣ微机作为主控机，配以接口模块，数据采集模块，控制模块及电容仪等，可使测量快速，准确地进行，并可使复杂的操作与计算过程完全自动化。
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| 关 键 词： | 半导体 掺杂分布 精细结构 |
MEASUREMENT OF THE FINE STRUCTURE OF SEMICONDUCTOR DOPING PROFILE USING C V TECHNIQUE |
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| Sun,Zhigang,Li,Tonghe,Gao,Jie,Chen,Guangsui.MEASUREMENT OF THE FINE STRUCTURE OF SEMICONDUCTOR DOPING PROFILE USING C V TECHNIQUE[J].Journal of Xi'an Jiaotong University,1996,30(9):35-40. |
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| Authors: | Sun Zhigang Li Tonghe Gao Jie Chen Guangsui |
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| Abstract: | An improved method for the capacitance voltage measurement is presented. By this method, the fine structure of the doping profile can be measured both in the surface layer of the Si and the GaAs samples. Controlling the whole measurement process and the data analysis process by the computerized system make this new method more convenient, accurate and speedy. The hardware and software of this improved measurement system are described in detail. |
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| Keywords: | semiconductor doping profile fine scanning voltage measurement system |
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