穿通型pn结二极管的击穿电压

提出了一种确定穿通型二极管轻掺杂区一系列参数的方法，在大量数值计算基础上，获得了有效率电离率系数随硅单边穿变结轻掺杂区材料导电类型和电阻率变化的经验公式，把这种解析方法与有效电离率参变量相结合所得结果大电压范围内与数值计算结果符合得相当好。

THE BREAKDOWN VOLTAGE OF PUNCH THROUGH p n JUNCTION

A method is presented by which a series of parameters for the light doping region of a punch through p n junction diode can be established. On the basis of a lot of numerical computing results, an empiric formula is obtained which shows the relationship between the coefficient of effective ionization rate and the resistivity as well as the resistivity type for light doping side of a silicon step junction. It has been shown that the results obtained by above analytic method and empiric formula, in a large range of breakdown voltage, agree with those of numerical computation very well.